FDA38N30 datasheet

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О ДАТАШИТЕ

• Маркировка
  FDA38N30
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDA38N30 Continuous Drain Current: 38 A Current - Continuous Drain (id) @ 25?° C: 38A Drain To Source Voltage (vdss): 300V Drain-source Breakdown Voltage: 300 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 6.3 S Gate Charge (qg) @ Vgs: 60nC @ 10V Gate Charge Qg: 60 nC Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 2600pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: * Power - Max: 312W Power Dissipation: 312 W Rds On (max) @ Id, Vgs: 85 mOhm @ 19A, 10V Resistance Drain-source Rds (on): 0.07 Ohms Series: UniFET?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 250?µA
• Количество страниц
  8 шт.
• Форматы файла
  HTML, PDF

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